2N4033 pnp silicon transistor description: the central semiconductor 2N4033 type is a pnp silicon transistor manufactured by the epitaxial planar process, designed for high current general purpose amplifier applications. marking: full part number to-39 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.0 a power dissipation p d 1.25 w power dissipation (t c =25c) p d 7.0 w operating and storage junction temperature t j, t stg -65 to +200 c thermal resistance ja 140 c/w thermal resistance jc 20 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 50 na i cbo v cb =60v, t a =150c 50 a i ebo v eb =5.0v 10 a bv cbo i c =10a 80 v bv ceo i c =10ma 80 v bv ebo i e =10a 5.0 v v ce(sat) i c =150ma, i b =15ma 0.15 v v ce(sat) i c =500ma, i b =50ma 0.50 v v be(sat) i c =150ma, i b =15ma 0.90 v v be(on) v ce =0.5v, i c =500ma 1.10 v h fe v ce =5.0v, i c =0.1ma 75 h fe v ce =5.0v, i c =100ma 100 300 h fe v ce =5.0v, i c =500ma 70 h fe v ce =5.0v, i c =1.0a 25 f t v ce =10v, i c =50ma 100 400 mhz c ob v cb =10v, i e =0, f=1.0mhz 20 pf c ib v eb =0.5v, i c =0, f=1.0mhz 110 pf t on i c =500ma, i b1 =50ma 100 ns t s i c =500ma, i b1 =i b2 =50ma 350 ns t f i c =500ma, i b1 =i b2 =50ma 50 ns r1 (15-march 2012) www.centralsemi.com
2N4033 pnp silicon transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number www.centralsemi.com r1 (15-march 2012)
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